| PART |
Description |
Maker |
| UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9J |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
NEC[NEC]
|
| UPD45128163G5-A10-9JF UPD45128163G5-A75A-9JF UPD45 |
128M-BIT SYNCHRONOUS DRAM 4-BANK, LVTTL
|
ELPIDA[Elpida Memory]
|
| PD45128163G5-A10I-9JF PD45128163G5-A10LI-9JF PD451 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
| UPD45128163G5-A10I-9JF UPD45128163G5-A10LI-9JF UPD |
128M-BIT SYNCHRONOUS DRAM 4-BANK, LVTTL WTR (WIDE TEMPERATURE RANGE)
|
ELPIDA[Elpida Memory]
|
| HY57V28420HCLT-H HY57V28420HCLT-K HY57V28420HCLT |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 32Mx4 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
HYNIX SEMICONDUCTOR INC
TE Connectivity, Ltd.
|
| M2V28S40ATP-8L M2V28S20ATP M2V28S20ATP-6 M2V28S20A |
128M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYB39S512400AEL-7.5 |
128M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| HY57V28162 HY57V281620HCT HY57V281620HCLT |
8Mx16|3.3V|4K|6|SDR SDRAM - 128M
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX
|
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
